STI34N65M5 查看數據表（PDF） - STMicroelectronics

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STI34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

Electrical characteristics

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Symbol

Parameter

Table 5. On /off states

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = 650 V

drain current (VGS = 0) VDS = 650 V, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

Gate threshold voltage VDS = VGS, ID = 250 µA

Static drain-source

on-resistance

VGS = 10 V, ID = 14 A

Min. Typ. Max. Unit

650

V

1 µA

100 µA

± 100 nA

3

4

5

V

0.09 0.11 Ω

Symbol

Parameter

Table 6. Dynamic

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

- 2700 - pF

-

75

- pF

-

6.3

- pF

Co(tr)(1)

Co(er)(2)

Equivalent

capacitance time

related

Equivalent

capacitance energy

related

VDS = 0 to 520 V, VGS = 0

-

220

- pF

-

63

- pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

1.95

-

Ω

Qg

Total gate charge

VDD = 520 V, ID = 14 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 18)

-

62.5

- nC

-

17

- nC

-

28

- nC

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

4/22

DocID022853 Rev 3

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