STI34N65M5 查看數據表（PDF） - STMicroelectronics

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STI34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Electrical characteristics

Symbol

Parameter

td (v)

tr (v)

tf (i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

Table 7. Switching times

Test conditions

VDD = 400 V, ID = 18 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19 and

Figure 22)

Min. Typ. Max. Unit

-

59

- ns

-

8.7

- ns

-

7.5

- ns

-

12

- ns

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD Source-drain current

-

ISDM (1) Source-drain current (pulsed)

-

VSD (2) Forward on voltage

ISD = 28 A, VGS = 0

-

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

-

ISD = 28 A, di/dt = 100 A/µs

-

VDD = 100 V (see Figure 22)

-

trr

Reverse recovery time

ISD = 28 A, di/dt = 100 A/µs

-

Qrr Reverse recovery charge

VDD = 100 V, Tj = 150 °C

-

IRRM Reverse recovery current

(see Figure 22)

-

1. Pulse width limited by safe operating area.

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

28 A

112 A

1.5 V

350

ns

5.6

µC

32

A

422

ns

7.4

µC

35

A

DocID022853 Rev 3

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