STI34N65M5 查看數據表（PDF） - STMicroelectronics

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STI34N65M5

N-channel 650 V, 0.09 Ω typ., 28 A MDmesh™ V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

STMicroelectronics 

Electrical characteristics

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5

Figure 14. Source-drain diode forward

characteristics

VSD

(V)

TJ=-50°C

1.2

AM05461v1

1.0

0.8

0.6

TJ=150°C

0.4

0.2

TJ=25°C

0

0 10 20 30 40 50 ISD(A)

Figure 16. Switching losses vs gate resistance

(1)

E (μJ)

500

VDD=400 V

VGS=10 V

ID=18 A

Eon

AM15325v1

400

Figure 15. Normalized VDS vs temperature

VDS

(norm)

1.08

1.06

ID = 1mA

AM10399v1

1.04

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0

25 50 75 100 TJ(°C)

300

200

Eoff

100

0

0

10

20 30

40

1. Eon including reverse recovery of a SiC diode

RG(Ω)

8/22

DocID022853 Rev 3

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