STI34N65M5 查看數據表（PDF） - Inchange Semiconductor
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STI34N65M5 Datasheet PDF : 2 Pages
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isc N-Channel MOSFET Transistor
FEATURES
·Drain Current –ID=28A@ TC=25℃
·Drain Source Voltage-
: VDSS= 650V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 110mΩ(Max)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
650
V
±25
V
28
A
112
A
190
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
0.66
UNIT
℃/W
STI34N65M5
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
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