P0260EI 查看數據表（PDF） - Unspecified
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P0260EI Datasheet PDF : 8 Pages
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P0260EI
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
ID
600V
4.4Ω @VGS = 10V
2A
TO-251
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
ID
2
TC = 100 °C
1.4
IDM
8
IAS
2
EAS
20
Power Dissipation
TC = 25 °C
PD
56
TC = 100 °C
22
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 50V , L = 10mH ,starting TJ = 25˚C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.2
62.5
UNITS
°C / W
REV 1.1
1
2015/7/14
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