P0510AT 查看數據表（PDF） - Unspecified
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P0510AT Datasheet PDF : 8 Pages
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P0510AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
5.5mΩ @VGS = 10V
ID
143A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
±25
Continuous Drain Current2
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
143
90
IDM
350
Avalanche Current
IAS
36
Avalanche Energy
L = 1mH
EAS
648
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
227
90
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Package limitation current is 111A.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
0.55
°C / W
62.5
REV 1.1
1
2018/5/16
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