P0510AT 查看數據表（PDF） - Niko Semiconductor

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P0510AT

N-Channel Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

N-Channel Enhancement Mode

P0510AT

Field Effect Transistor

TO-220

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V(BR)DSS

RDS(ON)

100V

5.5mΩ

ID

143A

D

G

S

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current2

Pulsed Drain Current1

TC = 25 °C

TC = 100 °C

Avalanche Current

Avalanche Energy

L = 1mH

Power Dissipation

TC = 25 °C

TC = 100 °C

Operating Junction & Storage Temperature Range

VDS

VGS

ID

IDM

IAS

EAS

PD

Tj, Tstg

1. GATE

2. DRAIN

3. SOURCE

LIMITS

100

±25

143

90

350

36

648

227

90

-55 to 150

UNITS

V

V

A

mJ

W

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

Junction-to-Case

RJC

Junction-to-Ambient

RJA

1Pulse width limited by maximum junction temperature.

2Package limitation current is 111A.

TYPICAL

MAXIMUM

0.55

62.5

UNITS

°C / W

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

V(BR)DSS

VGS(th)

IGSS

IDSS

STATIC

VGS = 0V, ID = 250A

VDS = VGS, ID = 250A

VDS = 0V, VGS = ±25V

VDS = 80V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125 °C

LIMITS

MIN TYP MAX

UNITS

100

V

234

±100 nA

1

10

A

REV 1.0

1

G-21-1

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