P0510AT 查看數據表（PDF） - Niko Semiconductor

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P0510AT

N-Channel Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

N-Channel Enhancement Mode

P0510AT

Field Effect Transistor

TO-220

Halogen-Free & Lead-Free

Drain-Source On-State

Resistance1

Forward Transconductance1

RDS(ON)

gfs

VGS = 7V, ID = 15A

VGS = 10V, ID = 20A

VDS = 10V, ID = 20A

DYNAMIC

4.4 7.5

mΩ

4 5.5

50

S

Input Capacitance

Ciss

6716

Output Capacitance

Coss

VGS = 0V, VDS = 25V, f = 1MHz

851

pF

Reverse Transfer Capacitance

Crss

555

Gate Resistance

Rg

VGS = 0V, VDS = 0V, f = 1MHz

1

Ω

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

Qg(VGS=10V)

146

Qg(VGS=7V)

Qgs

VDS =50V,ID = 20A

113

nC

30

Qgd

56

td(on)

98

tr

VDD = 50V,

194

nS

td(off)

ID  20A, VGS = 10V, RGEN =6Ω

170

tf

88

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current3

IS

143 A

Forward Voltage1

VSD

IF = 20A, VGS = 0V

1.2 V

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

IF = 20A, dIs/dt= 100A/μs

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Package limitation current is 111A.

53

nS

98

nC

REV 1.0

2

G-21-1

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