SZESD5Z7.0T5G 查看數據表（PDF） - ON Semiconductor

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SZESD5Z7.0T5G

ESD Protection Diode Micro−Packaged Diodes for ESD Protection

ON Semiconductor 

ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

IEC 61000−4−2 (ESD)

Contact

Air

kV

±30

±30

IEC 61000−4−4 (EFT)

40

A

ESD Voltage

Per Human Body Model

Per Machine Model

kV

16

V

400

Total Power Dissipation on FR−4 Board (Note 1) @ TA = 25°C

°PD°

500

mW

Junction and Storage Temperature Range

TJ, Tstg

−55 to +150

°C

Lead Solder Temperature − Maximum (10 Second Duration)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. FR−4 printed circuit board, single−sided copper, mounting pad 1 cm2.

See Application Note AND8308/D for further description of survivability specs.

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

Symbol

Parameter

IPP

Maximum Reverse Peak Pulse Current

VC

Clamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IR

Maximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

IT

Test Current

IF

Forward Current

VF

Forward Voltage @ IF

Ppk Peak Power Dissipation

C

Max. Capacitance @VR = 0 and f = 1 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

I

IF

VC VBR VRWM

IIRT VF

V

IPP

Uni−Directional

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