SZESD5Z7.0T5G 查看數據表（PDF） - ON Semiconductor
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SZESD5Z7.0T5G Datasheet PDF : 6 Pages
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ESD5Z2.5T1G Series, SZESD5Z2.5T1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
VBR (V)
VRWM IR (mA)
@ IT
(V) @ VRWM (Note 2) IT
Device*
Device
Marking Max Max
ESD5Z2.5T1G/T5G ZD
2.5
6.0
ESD5Z3.3T1G/T5G ZE
3.3
0.05
ESD5Z5.0T1G/T5G
ZF
5.0
0.05
Min mA
4.0
1.0
5.0
1.0
6.2
1.0
VC (V)
@ IPP =
5.0 A†
Typ
6.5
8.4
11.6
VC (V) @ IPP Ppk C
Max IPP† (A)† (W)† (pF)
VC
Per
IEC61000−4−2
Max Max Max Typ
(Note 3)
10.9 11.0 120 145 Figures 1 and 2
14.1 11.2 158 105
See Below
(Note 4)
18.6
9.4 174 80
ESD5Z6.0T1G/T5G ZG
6.0
0.01
6.8
1.0 12.4
20.5
8.8 181 70
ESD5Z7.0T1G/T5G ZH
7.0
0.01
7.5
1.0 13.5
22.7
8.8 200 65
ESD5Z12T1G/T5G
ZM
12
0.01
14.1 1.0
17
25
9.6 240 55
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
* Includes SZ-prefix devices where applicable.
†Surge current waveform per Figure 5.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. ESD5Z5.0T1G shown below. Other voltages available upon request.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV contact per IEC 61000−4−2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV contact per IEC 61000−4−2
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