3N80ZG-TF1-T 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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3N80ZG-TF1-T Datasheet PDF : 9 Pages
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3N80ZG-TF1-T
www.VBsemi.tw
2400
2000
1600
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
1200
Ciss
800
400
0
100
91114_05
Coss
Crss
101
VDS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
101 150 °C
25 °C
100
0.6
91114_07
VGS = 0 V
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 ID = 3.2 A
16
VDS = 300 V
VDS = 240 V
12
VDS = 180 V
8
4
0
0
91114_06
For test circuit
see figure 13
8
16
24
32
40
QG, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
103
5
2
102
5
2
10
5
2
1
5
2
0.1
5
2
10-2
0.1 2
Operation in this area limited
by RDS(on)
10 µs
100 µs
1 ms
10 ms
51 2
TC = 25 °C
TJ = 150 °C
Single Pulse
5 10 2 5 102 2
5 103 2
5 104
91114_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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