3N80ZL-TF1-T 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

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3N80ZL-TF1-T

Power MOSFET

VBsemi Electronics Co.,Ltd 

3N80ZL-TF1-T

Power MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

850

VGS = 10 V

28

5

12

Single

2. 40

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Available

RoHS*

COMPLIANT

TO-220 FULLPAK

GDS

Top View

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TC = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

for 10 s

TJ, Tstg

Mounting Torque

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 23 mH, Rg = 25 Ω, IAS = 7.8 A (see fig. 12).

c. ISD ≤ 7.8 A, dI/dt ≤ 140 A/μs, VDD ≤ 600 V, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

E-mail：China@VBsemi TEL:86-755-83251052

LIMIT

850

± 20

5.5

3.9

24

1.5

770

7.8

19

45

5.0

- 55 to + 150

300d

10

1.1

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

lbf · in

N·m

1

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