3N40K3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

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产品描述 (功能)

生产厂家

3N40K3

Power MOSFET

VBsemi Electronics Co.,Ltd 

3N40K3 TO252

Power MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

Qg (Max.) (nC)

Qgs (nC)

Qgd (nC)

Configuration

650

VGS = 10 V

1.8

48

12

19

Single

FEATURES

• Low Gate Charge Qg Results in Simple Drive

Requirement

• Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Available

RoHS*

COMPLIANT

• Fully Characterized Capacitance and Avalanche Voltage

and Current

• Compliant to RoHS directive 2002/95/EC

TO-252

GDS

Top View

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Currente

Continuous Drain Current

Pulsed Drain Currenta

Linear Derating Factor

VDS

VGS

VGS at 10 V

TC = 25 °C

TC = 100 °C

ID

IDM

Single Pulse Avalanche Energyb

Repetitive Avalanche Currenta

Repetitive Avalanche Energya

Maximum Power Dissipation

Peak Diode Recovery dV/dtc

TC = 25 °C

EAS

IAR

EAR

PD

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)d

for 10 s

TJ, Tstg

Mounting Torque

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig. 12).

c. ISD ≤ 3.2 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. Drain current limited by maximum junction temperature.

LIMIT

650

± 30

4.5

4.2

18

0.48

325

4

6

60

2.8

- 55 to + 150

300

10

1.1

UNIT

V

A

W/°C

mJ

A

mJ

W

V/ns

°C

lbf · in

N·m

E-mail：China@VBsemi TEL:86-755-83251052

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