3N40 查看數據表（PDF） - Unisonic Technologies
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3N40 Datasheet PDF : 6 Pages
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3N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Avalanche Energy
Power Dissipation
Derate above 25°C
Continuous (TC=25°C)
Pulsed (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
TO-220F
TO-252/TO-252D
TO-220F
TO-252/TO-252D
VDSS
VGSS
ID
IDM
EAS
EAR
PD
400
V
±30
V
3
A
12
A
290
mJ
3
mJ
25
W
50
W
0.2
W/°C
0.4
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=56mH, IAS=3.0 A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F
TO-252/TO-252D
Junction to Case
TO-220F
TO-252/TO-252D
SYMBOL
θJA
θJC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-553.d
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