3N50 查看數據表（PDF） - Inchange Semiconductor

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3N50

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

3N50

·FEATURES

·Drain Current ID= 3A@ TC=25℃

·Drain Source Voltage-

: VDSS= 500V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 3.0Ω(Max)

·Fast Switching

·APPLICATIONS

·Switching power supplies,converters,AC and DC motor controls

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

500

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

3

A

IDM

Drain Current-Single Plused

5

A

PD

Total Dissipation @TC=25℃

60

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150 ℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

1.67 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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