3N50Z 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

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产品描述 (功能)

生产厂家

3N50Z

N-Channel 650 V (D-S) Power MOSFET

VBsemi Electronics Co.,Ltd 

3N50Z

www.VBsemi.tw

D.U.T.

+

-

Peak Diode Recovery dV/dt Test Circuit

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

+

RG

• dV/dt controlled by RG

+

• Driver same type as D.U.T.

• ISD controlled by duty factor "D"

- VDD

• D.U.T. - device under test

Driver gate drive

P.W.

Period

D=

P.W.

Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse

recovery

Body diode forward

current

current

dI/dt

D.U.T. VDS waveform

Diode recovery

dV/dt

VDD

Re-applied

voltage

Body diode forward drop

Inductor crurent

Ripple ≤ 5 %

ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

E-mail：China@VBsemi TEL:86-755-83251052

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