3N50ZL-TM3-T 查看數據表（PDF） - Unisonic Technologies
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3N50ZL-TM3-T Datasheet PDF : 7 Pages
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3N50Z
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
500
V
Gate-Source Voltage
VGSS
±30
V
Drain Current
Continuous (TC=25°C)
ID
Pulsed (Note 2)
IDM
3 (Note 5)
A
12 (Note 5)
A
Avalanche Current (Note 2)
IAR
3
A
Avalanche Energy
Single Pulsed (Note 3)
EAS
Repetitive (Note 4)
EAR
200
mJ
6.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation (TC=25°C)
TO-220F
TO-251
PD
25
W
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 40mH, IAS = 3A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
4. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
5. Drain current limited by maximum junction temperature.
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220F
TO-251
Junction to Case
TO-220F
TO-251
SYMBOL
θJA
θJC
RATINGS
62.5
110
4.9
2.5
UNIT
°C/W
°C/W
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-747.b
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