3N50Z 查看數據表（PDF） - Unisonic Technologies

零件编号

产品描述 (功能)

生产厂家

3N50Z

3.0A, 500V N-CHANNEL POWER MOSFET

Unisonic Technologies 

3N50Z

Preliminary

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS ID=250µA, VGS=0V

500

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

Gate- Source Leakage Current

Forward

Reverse

IGSS

VGS=+30V, VDS=0V

VGS=-30V, VDS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH) VDS=VGS, ID=250µA

2.0

Static Drain-Source On-State Resistance

RDS(ON) VGS=10V, ID=1.5A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

CISS

COSS

VGS=0V, VDS=25V, f=1.0MHz

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

QG

QGS

VGS=10V, VDS=400V, ID=3A

(Note 1, 2)

QGD

Turn-ON Delay Time

tD(ON)

Rise Time

Turn-OFF Delay Time

tR

tD(OFF)

VDD=250V, ID=3A, RG=25Ω

(Note 1, 2)

Fall-Time

tF

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=3A, VGS=0V

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

trr

IS=3A, VGS=0V,

Qrr

dIF/dt=100A/µs (Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.

2. Essentially independent of operating temperature.

TYP MAX UNIT

V

1 µA

+100 nA

-100 nA

4.0 V

2.2 3.2 Ω

280 365 pF

50 65 pF

8.5 11 pF

10 13 nC

1.5

nC

5.5

nC

10 30 ns

25 60 ns

35 80 ns

25 60 ns

3

A

12 A

1.4 V

170

ns

0.7

µC

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

4 of 7

QW-R502-747.b

Share Link: