DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

20TQ035-M3 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
20TQ035-M3
Vishay
Vishay Semiconductors Vishay
20TQ035-M3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
VS-20TQ035-M3, VS-20TQ040-M3, VS-20TQ045-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
2L TO-220AC
1
3
Cathode Anode
PRIMARY CHARACTERISTICS
IF(AV)
VR
VF at IF
IRM typ.
TJ max.
EAS
Package
20 A
35 V, 40 V, 45 V
0.51 V
105 mA at 125 °C
150 °C
27 mJ
2L TO-220AC
Circuit configuration
Single
FEATURES
• 150 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified according to JEDEC®-JESD 47
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-20TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
TJ
Rectangular waveform
Range
tp = 5 μs sine
20 Apk, TJ = 125 °C
Range
VALUES
20
35 to 45
1800
0.51
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse
voltage
SYMBOL
VR
VRWM
VS-20TQ035-M3
35
VS-20TQ040-M3
40
VS-20TQ045-M3
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
See fig. 5
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
See fig. 7
Non-repetitive avalanche energy
EAS
Repetitive avalanche current
IAR
TEST CONDITIONS
50 % duty cycle at TC = 116 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
TJ = 25 °C, IAS = 4 A, L = 3.4 mH
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
VALUES
20
1800
400
27
4
UNITS
A
mJ
A
Revision: 07-May-2020
1
Document Number: 96263
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]