DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1N5818HS 查看數據表(PDF) - Unspecified

零件编号
产品描述 (功能)
生产厂家
1N5818HS Datasheet PDF : 3 Pages
1 2 3
Features
Reverse Voltage - 20 to 40 V
Forward Current - 1 A
1N5817HS thru 1N5819HS
Surface Mount Schottky Barrier Rectifier
SOD-323HE
1
2
1Cathode 2Anode
Marking : 1N5817HS:SK
1N5818HS-1N5819HS:SL
Maximum Ratings and Electrical Characteristics
Ratings at 25ambient temperature unless otherwise specified. Single phase half wave 60 Hz, resistive or inductive load, for
capacitive load current derate by 20 %.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Single Half Sine Wave
Superimposed on Rated Load(JEDEC methode)
Maximum Instantaneous Forward Voltage
Maximum Instantaneous Reverse Current at
Rated DC Blocking Voltage 1)
Typical Junction Capacitance 2)
at IF = 1 A
at IF = 3 A
TA = 25
TA = 100
Typical Thermal Resistance, Junction to Ambient 3)
Operating Junction Temperature Range
Storage Temperature Range
Symbols 1N5817HS
VRRM
20
VRMS
14
VDC
20
IF(AV)
1N5818HS 1N5819HS
30
40
21
28
30
40
1
Units
V
V
V
A
IFSM
25
A
VF
IR
CJ
RθJA
TJ
TSTG
0.45
0.55
0.6
0.75
0.875
0.9
0.5
10
110
75
- 55 to + 125
- 55 to + 150
V
mA
pF
/W
Note:
1Pulse test: 300 µs pulse width, 1% duty cycle
2Mearsured at 1 MHz and reverse voltage of 4 V
3Thermal resistance junction to ambient 0.24" X 0.24"(6 X 6 mm) copper pads to each terminals
www.pingjingsemi.com
1/3
Revision1.0 Oct-2017

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]