1N5818WS 查看數據表（PDF） - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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1N5818WS Datasheet PDF : 3 Pages
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SCHOTTKY BARRIER DIODE
1N5817WS THRU 1N5819WS SOD-323
Pinning
1.Cathode
2.Anode
FEATURES
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Negligible Reverse Recovery Time
Low Capacitance
Lead free in comply with EU RoHS 2011/65/EU directives
MECHANICAL DATA
Case: SOD-323
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 5.48mg / 0.00019oz
1
2
SOD-323
Marking Code
1N5819WS
S4
1N5818WS
S5
1N5817WS
S6
Maximum Ratings and Electrical characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbols 1N5819WS
Peak Repetitive Reverse Voltage
VRRM
40
RMS reverse voltage
VRMS
28
Working Peak Reverse Voltage
VDC
40
Peak Forward Surge Current, 8.3ms Single Half Sine-
wave Superimposed On Rated Load(JEDEC
IFSM
method)
Maximum Instantaneous Forward
Voltage
IF=20mA
VF
IF=200mA
Power Dissipation
PD
1N5819WS,VR=30V
5
Reverse current
1N5818WS,VR=20V
IR
-
1N5817WS,VR=10V
-
Thermal Resistance, Junction to Ambient Air
RθJA
Reverse voltage
IR=100uA
1N5819WS
1N5818WS
1N5817WS
Reverse recovery time IF=IR=200mA,Irr=0.1xIR,
RL=100Ω
V(BR)R
Trr
Forward Continuons Current
IFM
Total capacitance VR=0V.f=1MHZ
Ctot
Junction temperature
Tj
Storage temperature
Tstg
1N5818WS
30
21
30
13
0.37
0.60
200
-
5
-
300
40
30
20
10
350
50
125
-55 ~ +150
1N5817WS
20
14
20
-
-
5
Units
V
V
V
A
V
mW
uA
°C/W
V
nS
mA
pF
°C
°C
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Dongguan YFW Electronics Co, Ltd.
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