SI3430DV-T1 查看數據表（PDF） - Vishay Semiconductors
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SI3430DV-T1 Datasheet PDF : 5 Pages
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N-Channel 100-V (D-S) MOSFET
Si3430DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.170 @ VGS = 10 V
0.185 @ VGS = 6.0 V
ID (A)
2.4
2.3
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3430DV-T1
FEATURES
D High-Efficiency PWM Optimized
D 100% Rg Tested
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)a
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v1%)
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IAR
EAR
IS
PD
TJ, Tstg
100
"20
2.4
1.8
1.7
1.3
8
6
1.8
1.7
1.0
2.0
1.14
1.0
0.59
- 55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 5 sec
Steady State
Steady State
Document Number: 71235
S-31725—Rev. B, 18-Aug-03
Symbol
RthJA
RthJF
Typical
45
90
25
Maximum
62.5
110
30
Unit
_C/W
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