SI3434DV-T1-E3 查看數據表（PDF） - Vishay Semiconductors
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SI3434DV-T1-E3 Datasheet PDF : 9 Pages
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Si3434DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.30
50
0.15
40
ID = 1 mA
0.00
30
- 0.15
20
- 0.30
- 0.45
10
- 0.60
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
10 -3
10 -2
10 -1
1
10
Time (s)
Single Pulse Power
100 600
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 90 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
Square Wave Pulse Duration (s)
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71610.
www.vishay.com
4
Document Number: 71610
S09-0766-Rev. B, 04-May-09
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