SI4599DY 查看數據表（PDF） - Vishay Semiconductors
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SI4599DY Datasheet PDF : 15 Pages
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Si4599DY
Vishay Siliconix
New Product
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
5
VGS = 10 thru 5 V
4V
24
4
18
3
TC = 25 °C
12
2
6
0
0.0
0.060
3V
0.5
1.0
1.5
2.0
2.5
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.052
1
0
0
800
640
TC = 125 °C
1
2
TC = - 55 °C
3
4
5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Ciss
0.044
0.036
0.028
VGS = 4.5 V
VGS = 10 V
0.020
0
6
12
18
24
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 5 A
8
VDS = 10 V
VDS = 20 V
6
VDS = 30 V
4
2
0
0.0
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4
2.5
5.0
7.5
10.0
12.5
Qg - Total Gate Charge (nC)
Gate Charge
480
320
Coss
160
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 5 A
1.6
VGS = 10 V
1.4
1.2
VGS = 4.5 V
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 68971
S-82619-Rev. A, 03-Nov-08
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