SI4559EY 查看數據表（PDF） - Vishay Semiconductors
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SI4559EY Datasheet PDF : 7 Pages
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Si4559EY
Vishay Siliconix
N- and P-Channel 60-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
N-Channel
60
0.055 at VGS = 10 V
0.075 at VGS = 4.5 V
P-Channel
- 60
0.120 at VGS = - 10 V
0.150 at VGS = - 4.5 V
ID (A)
± 4.5
± 3.9
± 3.1
± 2.8
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 175 °C Maximum Junction Temperature
• Compliant to RoHS Directive 2002/95/EC
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4559EY-T1-E3 (Lead (Pb)-free)
Si4559EY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
- 60
V
VGS
± 20
± 20
Continuous Drain Current (TJ = 175 °C)a
TA = 25 °C
TA = 70 °C
ID
± 4.5
± 3.8
± 3.1
± 2.6
A
Pulsed Drain Current
IDM
± 30
± 30
Continuous Source Current (Diode Conduction)a
IS
2.0
- 2.0
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.4
1.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
RthJA
N- or P-Channel
62.5
Unit
°C/W
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
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