SI4559EY 查看數據表（PDF） - Vishay Semiconductors
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SI4559EY Datasheet PDF : 7 Pages
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Si4559EY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.10
0.08
10
ID = 4.5 A
0.06
TJ = 175 °C
TJ = 25 °C
0.04
0.02
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.2
0.0
- 0.2
ID = 250 µA
- 0.4
- 0.6
- 0.8
- 1.0
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
0.01
0.1
1
10
30
Time (s)
Single Pulse Power
0.2
0.1
0.1
0.05
0.02
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
www.vishay.com
4
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
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