SI4559EY 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
SI4559EY Datasheet PDF : 7 Pages
| |||
Si4559EY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
20
VGS = 10 V, 9 V, 8 V, 7 V, 6 V
24
16
5V
18
12
TC = - 55 °C
- 150 °C
25 °C
12
6
0
0
1.0
4V
3V
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.8
0.6
0.4
VGS = 4.5 V
0.2
VGS = 10 V
0
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 3.1 A
8
6
VDS = 30 V
8
4
0
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
1400
1200
Ciss
1000
800
600
400
Coss
200
Crss
0
0
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
2.0
ID = 3.1 A
1.6
1.2
VGS = 10 V
4
0.8
2
0.4
0
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
Gate Charge
0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
www.vishay.com
5
Share Link: 