SI4559EY 查看數據表（PDF） - Vishay Semiconductors
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SI4559EY Datasheet PDF : 7 Pages
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Si4559EY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.5
10
0.4
TJ = 175 °C
0.3
TJ = 25 °C
0.2
ID = 3.1 A
0.1
1
0.00 0.25 0.50 0.75 1.00 1.25 1.50
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.75
0.50
0.25
ID = 250 μA
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
TC = 25 °C
Single Pulse
40
30
20
10
- 0.25
- 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C)
Threshold Voltage
2
1
Duty Cycle = 0.5
0
0.01
0.1
1
10
30
Time (s)
Single Pulse Power
0.2
Notes:
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5 °C/W
3. TJM - TA = PDMZ thJA(t)
4. Surface Mounted
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
30
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70167.
www.vishay.com
6
Document Number: 70167
S09-1389-Rev. E, 20-Jul-09
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