SI4559DY-T1-GE3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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SI4559DY-T1-GE3 Datasheet PDF : 14 Pages
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SI4559DY-T1-GE3
N- and P-Channel 60-V (D-S) MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V)
N-Channel 60
P-Channel - 60
RDS(on) (Ω)
0.028 at VGS = 10 V
0.031 at VGS = 4.5 V
0.050 at VGS = - 10 V
0.060 at VGS = - 4.5 V
ID (A)a
5.3
4.7
- 4.9
- 4.5
Qg (Typ.)
6 nC
8 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• CCFL Inverter
D1
S2
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
G1
S1
G2
D2
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (10 µs Pulse Width)
Source Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
VDS
60
- 60
V
VGS
± 20
TC = 25 °C
5.3
- 4.9
TC = 70 °C
TA = 25 °C
ID
4.3
4.3b, c
- 4.2
- 4.0b, c
TA = 70 °C
3.4b, c
- 3.4b, c
IDM
20
- 25
A
TC = 25 °C
TA = 25 °C
IS
2.6
1.7b, c
- 2.8
- 1.7b, c
ISM
20
- 25
L = 0.1 mH
IAS
11
EAS
6.1
15
11
mJ
TC = 25 °C
3.1
3.4
TC = 70 °C
TA = 25 °C
PD
2
2b, c
2.2
W
2b, c
TA = 70 °C
1.3b, c
1.3b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W for N-Channel and P-Channel.
N-Channel
Typ. Max.
55
62.5
33
40
P-Channel
Typ. Max.
53
62.5
30
37
Unit
°C/W
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