SI4559DY-T1-GE3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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SI4559DY-T1-GE3 Datasheet PDF : 14 Pages
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SI4559DY-T1-GE3
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.VBsemi.tw
6
5
4
3
2
1
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100 125 150
TC - Case Temperature (°C)
Power Derating
100
10
TA =
L . ID
BV - VDD
1
0.000001
0.00001
0.0001
TA - Time In Avalanche (s)
Single Pulse Avalanche Capability
0.001
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
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