SI4559DY-T1-GE3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

零件编号

产品描述 (功能)

生产厂家

SI4559DY-T1-GE3

N- and P-Channel 60-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

SI4559DY-T1-GE3

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

www.VBsemi.tw

20

TJ = 150 °C

10

TJ = 25 °C

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0.6

0.40

0.35

0.30

0.25

ID = 3.1 A

0.20

0.15

0.10

0.05

0.00

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

50

0.4

40

ID = 250 µA

0.2

30

0.0

20

- 0.2

10

- 0.4

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

100

10

Limited

by RDS(on)*

0

10-3

10-2

10-1

1

10

Time (s)

Single Pulse Power

100 600

IDM Limited

P(t) = 0.0001

1

P(t) = 0.001

ID(on)

Limited

0.1

TA = 25 °C

Single Pulse

P(t) = 0.01

P(t) = 0.1

P(t) = 1

P(t) = 10

BVDSS Limited

DC

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Case

E-mail：China@VBsemi TEL:86-755-83251052

9

Share Link: