SI4559ADY(2006) 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
SI4559ADY Datasheet PDF : 12 Pages
| |||
New Product
Si4559ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
PĆCHANNEL
Source-Drain Diode Forward Voltage
20
TJ = 150_C
10
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
0.25
0.20
ID = 3.1 A
0.15
0.10
TJ = 25_C
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.6
Single Pulse Power
50
0.4
40
ID = 250 mA
0.2
30
0.0
20
–0.2
10
–0.4
–50 –25
0 25 50 75 100 125 150
TJ – Temperature (_C)
0
10–3
10–2
10–1
1
10
Time (sec)
Safe Operating Area, Junction-to-Case
100
IDM Limited
100 600
10
Limited
by rDS(on)
P(t) = 0.0001
Document Number: 73624
S–52667—Rev. A, 02-Jan-06
1
P(t) = 0.001
0.1
0.01
ID(on)
Limited
TA = 25 _C
Single Pulse
BVDSS Limited
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
*VGS u minimum VGS at which rDS(on) is specified
www.vishay.com
9
Share Link: 