SI3477DV-T1-GE3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
零件编号
产品描述 (功能)
生产厂家
SI3477DV-T1-GE3 Datasheet PDF : 9 Pages
| |||
SI3477DV-T1-GE3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
5
VGS = 10 thru 5 V
16
4
12
3
VGS = 4 V
8
2
www.VBsemi.tw
TC = - 55 °C
TC = 25 °C
4
0
0.0
0.065
VGS = 3 V
VGS = 2 V
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
1
TC = 125 °C
0
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
800
0.060
0.055
VGS = 4.5 V
0.050
0.045
VGS = 10 V
0.040
0
4
8
12
16
20
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
ID = 4.1 A
8
VDS = 15 V
6
4
VDS = 24 V
600
Ciss
400
200
Coss
Crss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V, ID = 4.1 V
1.4
1.2
VGS = 4.5 V, ID = 4.1 A
1.0
2
0.8
0
0
2
4
6
8
10
12
Qg - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
E-mail：China@VBsemi TEL:86-755-83251052
3
Share Link: 