SI4286DY 查看數據表（PDF） - Unspecified
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SI4286DY Datasheet PDF : 4 Pages
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Description：
This Dual N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=40V,ID=7A,RDS(ON)<32mΩ@VGS=4.5V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
Si4286DY
S1
G1
S2
G2
D1
D1
D2
D2
Absolute Maximum Ratings：(TC=25℃ unless otherwise noted)
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current-TC=100℃
Pulsed Drain Current1
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Junction Temperature Range
Ratings
40
±20
7
3
20
---
1.56
-55 to +150
Thermal Characteristics：
Symbol
Parameter
Max
RƟJL
Maximum Junction-to-Lead
---
RƟJA Thermal Resistance,Junction to Ambient
80
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Units
V
V
A
mJ
W
℃
Units
℃/W
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