SI4401BDY-T1-E3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

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SI4401BDY-T1-E3

P-Channel 40-V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

SI4401BDY-T1-E3

P-Channel 40 V (D-S) MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

- 40

RDS(on) ()

0.010 at VGS = - 10 V

0.014 at VGS = - 4.5 V

ID (A)a

- 16.1

- 13.3

Qg (Typ.)

33 nC

S1

S2

S3

G4

SO-8

Top View

8D

7D

6D

5D

S

G

D

P-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• 100 % Rg Tested

• 100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Load Switch

• POL

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Pulsed Drain Current

TC = 25 °C

TC = 70 °C

TA = 25 °C

TA = 70 °C

Continous Source-Drain Diode Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

TC = 25 °C

TA = 25 °C

L = 0.1 mH

TC = 25 °C

Maximum Power Dissipation

TC = 70 °C

TA = 25 °C

TA = 70 °C

Operating Junction and Storage Temperature Range

VDS

VGS

ID

IDM

IS

IAS

EAS

PD

TJ, Tstg

Limit

- 40

± 20

- 16.1

- 12.9

- 10.2b, c

- 8.2b, c

- 50

- 5.3

- 2.1b, c

- 28

39

6.3

4

2.5b, c

1.6b, c

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambientb, d

t  10 s

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Based on TC = 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under steady state conditions is 85 °C/W.

Symbol

RthJA

RthJF

Typical

37

16

Maximum

50

20

E-mail：China@VBsemi TEL:86-755-83251052

Unit

V

A

mJ

W

°C

Unit

°C/W

1

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