SI4401DDY-T1-GE3 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

零件编号

产品描述 (功能)

生产厂家

SI4401DDY-T1-GE3

P-Channel 40 V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

SI4401DDY-T1-GE3

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

100

0.05

TJ = 150 °C

10

0.04

0.03

TJ = 25 °C

1

0.02

0.01

TJ = 25 °C

www.VBsemi.tw

ID = 10.2 A

TJ = 125 °C

0.1

0

2.5

0.5

1.0

1.5

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

80

2.2

60

1.9

40

ID = 250 μA

1.6

20

1.3

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

0

10 - 2

10 - 1

1

10

100 1000

Time (s)

Single Pulse Power (Junction-to-Ambient)

100

Limited by RDS(on)*

10

1

100 μs

1 ms

10 ms

100 ms

0.1

TA = 25 °C

Single Pulse

1s

10 s

DC

BVDSS Limited

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

E-mail：China@VBsemi TEL:86-755-83251052

4

Share Link: