SSM6P35AFE 查看數據表（PDF） - Toshiba

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SSM6P35AFE

MOSFETs Silicon P-Channel MOS

Toshiba 

MOSFETs Silicon P-Channel MOS

SSM6P35AFE

1. Applications

• Analog Switches

2. Features

(1) 1.2 V drive

(2) ESD(HBM) level 2 kV

(3) Low drain-source on-resistance

: RDS(ON) = 3.2 Ω (typ.) (@VGS = -1.2 V)

RDS(ON) = 2.3 Ω (typ.) (@VGS = -1.5 V)

RDS(ON) = 2.0 Ω (typ.) (@VGS = -1.8 V)

RDS(ON) = 1.5 Ω (typ.) (@VGS = -2.5 V)

RDS(ON) = 1.1 Ω (typ.) (@VGS = -4.5 V)

3. Packaging and Internal Circuit

ES6

SSM6P35AFE

1: Source 1

2: Gate 1

3: Drain 2

4: Source 2

5: Gate 2

6: Drain 1

©2017 Toshiba Corporation

1

Start of commercial production

2017-07

2017-06-22

Rev.2.0

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