DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

SSM6P35AFE 查看數據表(PDF) - Toshiba

零件编号
产品描述 (功能)
生产厂家
SSM6P35AFE Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
SSM6P35AFE
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, Ta = 25 )(Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
IGSS VDS = 0 V, VGS = ±10 V
±1
µA
Drain cut-off current
IDSS VDS = -20 V, VGS = 0 V
-1
Drain-source breakdown voltage
V(BR)DSS ID = -1 mA, VGS = 0 V
-20
V
Drain-source breakdown voltage
(Note 1) V(BR)DSX ID = -1 mA, VGS = 10 V
-10
Gate threshold voltage
(Note 2) Vth VDS = -10 V, ID = -100 µA
-0.3
-1
Drain-source on-resistance
(Note 3) RDS(ON) ID = -10 mA, VGS = -1.2 V
3.2
20
ID = -20 mA, VGS = -1.5 V
2.3
4.0
ID = -50 mA, VGS = -1.8 V
2.0
2.9
ID = -150 mA, VGS = -2.5 V
1.5
2.1
ID = -150 mA, VGS = -4.5 V
1.1
1.4
Forward transfer admittance
(Note 3) |Yfs| VDS = -10 V, ID = -100 mA
430
mS
Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-100 µA
for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be
lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 )(Q1, Q2 Common)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on delay time)
Switching time (fall time)
Switching time (turn-off delay time)
Symbol
Test Condition
Ciss
Crss
Coss
tr
td(on)
tf
td(off)
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDD = -10 V, ID = -50 mA,
VGS = 0 to -4.5 V, RG = 10
Duty 1%, VIN: tr, tf < 5 ns,
Common source, See Chapter 5.3.
5.3. Switching Time Test Circuit
Min Typ. Max Unit
21
42
pF
2
6
42
ns
17
145
420
Fig. 5.3.1 Switching Time Test Circuit
Fig. 5.3.2 Input Waveform/Output Waveform
©2017 Toshiba Corporation
3
2017-06-22
Rev.2.0

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]