PJM2302NSA
N- Enhancement Mode Field Effect Transistor
Features
⚫ Fast Switching
⚫ Low Gate Charge and RDS(on)
⚫ High power and current handing capability
Applications
⚫ Battery protection
⚫ Load switch
⚫ Power management
SOT-23
1. Gate 2.Source 3.Drain
Marking: M22
Schematic diagram
3 Drain
1
Gate
2 Source
Absolute Maximum Ratings
Ratings at TC = 25℃ unless otherwise specified.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed Note 1
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance,Junction-to-Ambient Note 2
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
20
±8
3.3
16
0.9
-55 To 150
Unit
V
V
A
A
W
℃
Symbol
RθJA
Limit
139
Unit
℃/W
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Revision:2.0 May-2019