PJM2302NSA 查看數據表（PDF） - Unspecified
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PJM2302NSA Datasheet PDF : 8 Pages
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PJM2302NSA
N- Enhancement Mode Field Effect Transistor
Electrical Characteristics
TA=25℃ unless otherwise noted
Parameter
Symbol
Condition
Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V ID=250μA
20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±8V,VDS=0V
-
- ±100 nA
Gate Threshold Voltage Note3
VGS(th)
VDS=VGS,ID=250μA
0.5 0.75 1.2
V
Drain-Source On-State Resistance Note3
RDS(ON)
VGS=2.5V, ID=2.8A
VGS=4.5V, ID=3A
- 35
60
mΩ
- 29
45
mΩ
Forward Transconductance Note3
gFS
VDS=5V,ID=3A
-
8
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
- 300
-
pF
VDS=10V,VGS=0V,
Coss
- 120
-
pF
f=1.0MHz
Crss
-
80
-
pF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
- 10
-
nS
tr
VDD=10V, ID=3A
- 50
-
nS
td(off)
VGS=4.5V,RGEN=6Ω
- 17
-
nS
tf
- 10
-
nS
Qg
-
4
-
nC
VDS=10V,ID=3A,
Qgs
VGS=4.5V
- 0.7
-
nC
Qgd
- 1.5
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage Note 3
VSD
VGS=0V,IS=3.3A
- 0.75 1.2
V
Diode Forward Current Note 2
IS
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
-
-
3.3
A
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Revision：2.0 May-2019
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