PJM3416NSA-AP 查看數據表（PDF） - Unspecified

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PJM3416NSA-AP

N- Enhancement Mode Field Effect Transistor

Unspecified 

PJM3416NSA-AP

N- Enhancement Mode Field Effect Transistor

Features

 VDS = 20V,ID = 6.5A

RDS(ON) < 40mΩ @ VGS=1.8V

RDS(ON) < 33mΩ @ VGS=2.5V

RDS(ON) < 27mΩ @ VGS=4.5V

 High power and current handing capability

Applications

 Load switch

 PWM applications

SOT-23

1. Gate 2.Source 3.Drain

Marking: 3416

Schematic diagram

3 Drain

1

Gate

2 Source

Absolute Maximum Ratings

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed Note1

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Thermal Characteristics

Thermal Resistance,Junction-to-Ambient Note2

Symbol

VDS

VGS

ID

IDM

PD

TJ,TSTG

Limit

Unit

20

V

±10

V

6.5

A

30

A

1.4

W

-55 To 150

℃

RθJA

89

℃/W

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Revision：1.0 Jan-2019

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