BR24T256FJ-WGTR_ 查看數據表（PDF） - ROHM Semiconductor

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BR24T256FJ-WGTR_

High Reliability Serial EEPROMs I2C BUS BR24□□□□ family

ROHM Semiconductor 

BR24T□□□□Series

Technical Note

●Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Ratings

●Memory cell characteristics (Ta=25℃, Vcc=1.7～

5.5V)

Unit

Parameter

Limits

Min. Typ. Max

Unit

Impressed voltage VCC

-0.3～+6.5

450 (SOP8)*1

V

Number of data

rewrite times *1

1,000,000 －

－ Times

450 (SOP-J8)*2

300 (SSOP-B8)*3

Data hold years *1 40

－ － Years

Permissible

dissipation

330 (TSSOP-B8)*4

Pd

310 (TSSOP-B8J)*5 mW

*1Not 100% TESTED

310 (MSOP8) *6

300 (VSON008X2030) *7

800 (DIP-T8)*8

●Recommended operating conditions

Storage

temperature range

Tstg

－65～+150

℃

Action

temperature range

Topr

－40～+85

℃

Terminal voltage

‐

-0.3～Vcc+1.0*9

V

Parameter Symbol Ratings

Unit

Power source

voltage

Vcc

1.7～5.5

V

Junction

temperature *10

Tjmax

150

℃

*1,*2 When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.

*3,*7 When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.

*4 When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃.

*5, *6 When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.

*8 When using at Ta=25℃ or higher 8.1mW to be reduced per 1℃.

*9 The Max value of Terminal Voltage is not over 6.5V.

When the pulse width is 50ns or less, the Min value of

Terminal Voltage is not under -1.0V. (BR24T16/32/64/128/256/512/1M-W)

the Min value of Terminal Voltage is not under -0.8V. (BR24T01/02/04/08-W)

*10 Junction temperature at the storage condition.

Input voltage

VIN

0～Vcc

●Electrical characteristics (Unless otherwise specified, Ta=－40～+85℃, VCC=1.7～5.5V)

Parameter

Limits

Symbol

Unit

Min. Typ. Max.

Conditions

“H” input voltage 1

“L” input voltage 1

VIH1 0.7Vcc － Vcc+1.0 V

VIL1

-0.3*2

－ 0.3Vcc V

“L” output voltage 1

VOL1

－

－

0.4

V IOL=3.0mA, 2.5V≦Vcc≦5.5V (SDA)

“L” output voltage 2

VOL2

－

－

0.2

V IOL=0.7mA, 1.7V≦Vcc＜2.5V (SDA)

Input leak current

ILI

－1

－

1

µA VIN=0～Vcc

Output leak current

ILO

－1

－

1

µA

－

－

2.0

ICC1

－

－

2.5

mA

Current consumption

at action

－

－

4.5

－

－

0.5

ICC2

mA

－

－

2.0

Standby current

－

－

2.0

ISB

µA

－

－

3.0

○ Radiation resistance design is not made.

*1 BR24T512/1M-W is a target value because it is developing.

*2 When the pulse width is 50ns or less, it is -1.0V. (BR24T16/32/64/128/256/512/1M-W)

When the pulse width is 50ns or less, it is -0.8V. (BR24T01/02/04/08-W)

VOUT=0～Vcc (SDA)

Vcc=5.5V,fSCL=400kHz, tWR=5ms,

Byte write, Page write

BR24T01/02/04/08/16/32/64-W

Vcc=5.5V,fSCL=400kHz, tWR=5ms,

Byte write, Page write

BR24T128/256-W

Vcc=5.5V,fSCL=400kHz, tWR=5ms,

Byte write, Page write

BR24T512/1M-W

Vcc=5.5V,fSCL=400kHz

Random read, current read, sequential read

BR24T01/02/04/08/16/32/64/128/256-W

Vcc=5.5V,fSCL=400kHz

Random read, current read, sequential read

BR24T512/1M-W

Vcc=5.5V, SDA・SCL=Vcc

A0,A1,A2=GND,WP=GND

BR24T01/02/04/08/16/32/64/128/256-W

Vcc=5.5V, SDA・SCL=Vcc

A0, A1, A2=GND, WP=GND

BR24T512/1M-W

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2011.03 - Rev.A

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