DMTH4005SK3Q-13(2016_03) 查看數據表（PDF） - Diodes Incorporated.
零件编号
产品描述 (功能)
生产厂家
DMTH4005SK3Q-13 Datasheet PDF : 7 Pages
| |||
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 7)
Maximum Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TC = +25°C
(Note 10)
TC = +100°C
TC = +25C
Symbol
VDSS
VGSS
ID
IS
IDM
IAS
EAS
DMTH4005SK3Q
Value
40
±20
95
73
150
150
32.5
52.8
Units
V
V
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25°C
TC = +25°C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
2.1
38
100
1.5
-55 to +175
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
IDSS
IGSS
VGS(TH)
RDS(ON)
VSD
CISS
COSS
CRSS
RG
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
Min
40
2
Typ
3.6
0.9
3,062
902.2
179.2
0.67
49.1
10.3
13
8.7
6.8
18.6
7.3
31.8
26.5
Max
1
±100
4
4.5
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
10. Package limited.
Unit
V
µA
nA
V
mΩ
V
pF
Ω
nC
ns
ns
nC
Test Condition
VGS = 0V, ID = 1mA
VDS = 32V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 0V, IS = 50A
VDS = 20V, VGS = 0V,
f = 1MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDD = 20V, ID = 50A,
VGS = 10V
VDD = 20V, VGS = 10V,
ID = 50A, RG = 3Ω
IF = 50A, di/dt = 100A/μs
DMTH4005SK3Q
Document number: DS38661 Rev. 1 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated
Share Link: 