DMTH6002LPS-13(2017) 查看數據表（PDF） - Diodes Incorporated.
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DMTH6002LPS-13 Datasheet PDF : 7 Pages
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0.005
0.004
0.003
VGS = 4.5V, ID = 50A
0.002
0.001
VGS = 10V, ID = 50A
0
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
50
VGS = 0V
40
30
TA = 125oC
20
TA = 150oC
10
TA = 175oC
TA = 85oC
TA = 25oC
TA = -55oC
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
8
6
4
2
VDS = 30V, ID = 50A
0
0
30
60
90
120 150
Qg (nC)
Figure 11. Gate Charge
DMTH6002LPS
2.4
2.2
2
1.8
ID = 1mA
1.6
1.4
1.2
ID = 250µA
1
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs.
JunctionTemperature
100000
f=1MHz
10000
Ciss
1000
Coss
Crss
100
10
0
5 10 15 20 25 30 35 40
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
1000
RDS(ON) Limited
PW =10µs PW =1µs
100
PW =100µs
10
PW =1ms
PW =10ms
1 TJ(Max) = 175℃ TC = 25℃ PW =100ms
Single Pulse
DUT on Infinite Heatsink
DC
VGS=10V
0.1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMTH6002LPS
Document number: DS38143 Rev. 5 - 2
4 of 7
www.diodes.com
October 2017
© Diodes Incorporated
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