DMTH6005LPSQ-13 查看數據表（PDF） - Diodes Incorporated.
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DMTH6005LPSQ-13 Datasheet PDF : 7 Pages
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 7)
Maximum Continuous Body Diode Forward Current (Note 7)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 1mH
Avalanche Energy, L = 1mH
TA = +25C
TA = +70C
TC = +25C
(Note 10)
TC = +100C
Symbol
VDSS
VGSS
ID
ID
IS
IDM
IAS
EAS
DMTH6005LPSQ
Value
Unit
60
V
±20
V
20.6
17.2
A
100
A
90
100
A
160
A
14.8
A
98
mJ
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
TA = +25C
TC = +25C
Symbol
PD
RθJA
PD
RθJC
TJ, TSTG
Value
3.2
47
150
1
-55 to +175
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 10V)
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol Min Typ Max
BVDSS
60
IDSS
—
IGSS
—
—
—
—
1
—
±100
VGS(TH)
1
—
RDS(ON)
—
—
VSD
—
—
3
4.4
5.5
5.7
7.2
7.7
10
0.9
—
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
—
2962
—
— 965.2 —
—
59.8
—
—
0.66
—
—
47.1
—
—
23.1
—
—
10.2
—
—
12.5
—
—
8.3
—
—
9.4
—
—
22
—
—
8.9
—
—
40.4
—
—
49.7
—
Unit
Test Condition
V
VGS = 0V, ID = 1mA
μA VDS = 48V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 50A
mΩ VGS = 6V, ID = 20A
VGS = 4.5V, ID = 12.5A
V
VGS = 0V, IS = 50A
pF
VDS = 30V, VGS = 0V,
f = 1MHz
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC VDD = 30V, ID = 50A
ns
VDD = 30V, VGS = 10V,
ID = 30A, RG = 3.3Ω
ns
nC IF = 30A, di/dt = 100A/μs
Notes:
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Thermal resistance from junction to soldering point (on the exposed drain pad).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package limited.
DMTH6005LPSQ
Document number: DS38359 Rev. 2 - 2
2 of 7
www.diodes.com
February 2018
© Diodes Incorporated
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