BTA308X-800ET 查看數據表（PDF） - WeEn Semiconductors

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BTA308X-800ET

3Q Hi-Com Triac

WeEn Semiconductors 

BTA308X-800ET

3Q Hi-Com Triac

14 July 2017

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package.

This triac balances the requirements of commutation performance and gate sensitivity and is

intended for interfacing with low power drivers and logic ICs including microcontrollers.This "series

ET" triac will commutate the full rated RMS current at the maximum rated junction temperature

(Tj(max) = 150 °C) without the aid of a snubber.

2. Features and benefits

• High voltage capability

• High commutation capability with maximum false trigger immunity

• Direct interfacing with low level power drivers and logic ICs

• High junction operating temperature capability (Tj(max) = 150 °C)

• Planar passivated for voltage ruggedness and reliability

• Triggering in three quadrants only

• Sensitive gate for easy logic level triggering

3. Applications

• Compressor starting control circuits

• General purpose motor controls

• Reversing induction motor controls e.g. vertical axis washing machines

• Applications subject to high temperature (Tj(max) = 150 °C)

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

IT(RMS)

RMS on-state current full sine wave; Th ≤ 107 °C; Fig. 1;

Fig. 2; Fig. 3

ITSM

non-repetitive peak on- full sine wave; Tj(init) = 25 °C;

state current

tp = 20 ms; Fig. 4; Fig. 5

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

Tj

junction temperature

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

Min Typ Max Unit

-

-

800 V

-

-

8

A

-

-

60

A

-

-

65

A

-

-

150 °C

-

-

10

mA

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