BTA308X-800ET 查看數據表（PDF） - WeEn Semiconductors
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BTA308X-800ET Datasheet PDF : 13 Pages
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WeEn Semiconductors
BTA308X-800ET
3Q Hi-Com Triac
Symbol
Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 10 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/µs; snubberless
condition; gate open circuit; Fig. 12
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 10 V/µs; gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 1 V/µs; gate open circuit
Min Typ Max Unit
-
-
10
mA
-
-
10
mA
-
-
30
mA
-
1.3 1.65 V
400 -
-
V/µs
200 -
-
V/µs
3
-
-
A/ms
4
-
-
A/ms
6
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main
terminal 2
Simplified outline
mb
Graphic symbol
T2
T1
G
sym051
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA308X-800ET
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
BTA308X-800ET
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 July 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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