BTA312-800C 查看數據表（PDF） - NXP Semiconductors.
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BTA312-800C Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA312 series B and C
12 A Three-quadrant triacs high commutation
6. Static characteristics
Table 5. Static characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
IGT
gate trigger
VD = 12 V; IT = 0.1 A; see Figure 8
current
T2+ G+
T2+ G−
T2− G−
IL
latching current VD = 12 V; IGT = 0.1 A; see Figure 10
T2+ G+
T2+ G−
T2− G−
IH
holding current VD = 12 V; IGT = 0.1 A; see Figure 11
VT
on-state
voltage
IT = 15 A; see Figure 9
VGT
gate trigger
VD = 12 V; IT = 0.1 A; see Figure 7
voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C
ID
off-state current VD = VDRM(max); Tj = 125 °C
BTA312-600B
BTA312-800B
Min Typ Max
BTA312-600C Unit
BTA312-800C
Min Typ Max
2
-
50 2
-
35 mA
2
-
50 2
-
35 mA
2
-
50 2
-
35 mA
-
-
60 -
-
50 mA
-
-
90 -
-
60 mA
-
-
60 -
-
50 mA
-
-
60 -
-
35 mA
-
1.3 1.6 -
1.3 1.6 V
-
0.8 1.5 -
0.8 1.5 V
0.25 0.4 -
0.25 0.4 -
V
-
0.1 0.5 -
0.1 0.5 mA
BTA312_SER_B_C_1
Product data sheet
Rev. 01 — 13 March 2007
© NXP B.V. 2007. All rights reserved.
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