BTA312-800B 查看數據表（PDF） - NXP Semiconductors.
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BTA312-800B Datasheet PDF : 12 Pages
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NXP Semiconductors
BTA312 series B and C
12 A Three-quadrant triacs high commutation
7. Dynamic characteristics
Table 6. Dynamic characteristics
Symbol Parameter Conditions
dVD/dt
rate of rise of
off-state
voltage
VDM = 0.67 × VDRM(max); Tj = 125 °C;
exponential waveform; gate open circuit
dIcom/dt
rate of change
of
commutating
current
VDM = 400 V; Tj = 125 °C; IT(RMS) = 12 A;
without snubber; gate open circuit
tgt
gate-controlled ITM = 20 A; VD = VDRM(max); IG = 0.1 A;
turn-on time dIG/dt = 5 A/µs
BTA312-600B
BTA312-800B
BTA312-600C Unit
BTA312-800C
Min Typ Max Min Typ Max
1000 2000 -
500 -
-
V/µs
30 -
-
20 -
-
A/ms
-
2
-
-
2
-
µs
1.6
VGT
VGT(25°C)
1.2
0.8
001aab101
3
(1)
IGT
IGT(25°C)
2
(2)
(3)
1
001aac669
0.4
−50
0
50
100
150
Tj (°C)
0
−50
0
50
100
150
Tj (°C)
Fig 7. Normalized gate trigger voltage as a function of
junction temperature
(1) T2− G−
(2) T2+ G−
(3) T2+ G+
Fig 8. Normalized gate trigger current as a function of
junction temperature
BTA312_SER_B_C_1
Product data sheet
Rev. 01 — 13 March 2007
© NXP B.V. 2007. All rights reserved.
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