BTA312X-600D(2014) 查看數據表（PDF） - NXP Semiconductors.

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BTA312X-600D
(Rev.:2014)

3Q Hi-Com Triac

NXP Semiconductors. 

NXP Semiconductors

BTA312X-600D

3Q Hi-Com Triac

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VDRM

repetitive peak off-state voltage

IT(RMS)

RMS on-state current

full sine wave; Th ≤ 59 °C; Fig. 1; Fig. 2;

Fig. 3

ITSM

non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;

current

tp = 20 ms; Fig. 4; Fig. 5

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

I2t

I2t for fusing

tp = 10 ms; SIN

dIT/dt

rate of rise of on-state current IT = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs

IGM

peak gate current

PGM

peak gate power

PG(AV)

average gate power

over any 20 ms period

Tstg

storage temperature

Tj

junction temperature

15

IT(RMS )

(A)

10

003a a b679

100

IT(RMS )

(A)

80

60

Min Max Unit

-

600 V

-

12

A

-

100 A

-

110 A

-

50

A2s

-

100 A/µs

-

2

A

-

5

W

-

0.5 W

-40 150 °C

-

125 °C

003a a b681

40

5

20

0

-5 0

0

50

100

150

Th (°C)

Fig. 1. RMS on-state current as a function of heatsink

temperature; maximum values

010-2

10-1

1

10

s urge duration (s )

f = 50 Hz; Th = 59 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

BTA312X-600D

Product data sheet

All information provided in this document is subject to legal disclaimers.

29 May 2014

© NXP Semiconductors N.V. 2014. All rights reserved

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